Si3460BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
4
8
3
Package Limited
6
2
4
1
2
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
Foot (Drain) Temperat u re ( C)
Current Derating*
Foot (Drain) Temperat u re ( C)
Power Derating
* The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
www.vishay.com
5
相关PDF资料
SI3460DV-T1-E3 MOSFET N-CH 20V 5.1A 6TSOP
SI3464DV-T1-GE3 MOSFET N-CH D-S 20V 6-TSOP
SI3467DV-T1-GE3 MOSFET P-CH 20V 3.8A 6-TSOP
SI3473DV-T1-GE3 MOSFET P-CH D-S 12V 6-TSOP
SI3483DV-T1-GE3 MOSFET P-CH D-S 30V 6-TSOP
SI3495DV-T1-GE3 MOSFET P-CH 20V 5.3A 6-TSOP
SI3529DV-T1-GE3 MOSFET N/P-CH 40V 6-TSOP
SI3812DV-T1-GE3 MOSFET N-CH 20V 2A 6-TSOP
相关代理商/技术参数
Si3460-D01-GM 功能描述:热插拔功率分布 IEEE 802.3af PSE w/DC-DC CTRLR RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube
SI3460DDV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20 V (D-S) MOSFET
SI3460DDV-T1-GE3 功能描述:MOSFET 20V 7.9A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3460DV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
SI3460DV-T1 功能描述:MOSFET 20V 6.8A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3460DV-T1-E3 功能描述:MOSFET 20V 6.8A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3460DV-T1-GE3 功能描述:MOSFET 20V 6.8A 2.0W 38mohm @ 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
Si3460-E02-GM 功能描述:热插拔功率分布 IEEE 802.3af PSE w/DC-DC CTRLR RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube